New technologies and materials for power electronic switching devices are gaining momentum. Indeed, wide-bandgap semiconductors, such as silicon carbide (SiC) or gallium nitride (GaN), manifest advanced and innovative properties regarding their switching performance. Thus, increasing the switching dv/dt rate and reducing switching power losses. However, faster switching transient enhances the insulating material stresses. Therefore, we developed a pulse generator based on a series connection of four SiC MOSFETs to produce super-fast transient pulses. After the electronic circuit design and implementation, we performed several tests showing the capability of the pulse generator and proving the correct operation under strict output load conditions. The best-achieved dv/dt rate with a 4.2 kV pulse amplitude is 155 kV/μs in no-load condition and 110 kV/μs on a 100 pF load capacitance.

High dv/dt pulse generator based on series-connetion SiC MOSFETs / Torrisi, Alessandro; Brunelli, Davide. - (2022), pp. 528-533. ((Intervento presentato al convegno SPEEDAM 2022 tenutosi a Sorrento, Italy nel 22th-24th June 2022 [10.1109/SPEEDAM53979.2022.9842038].

High dv/dt pulse generator based on series-connetion SiC MOSFETs

Torrisi, Alessandro
Primo
;
Brunelli, Davide
Secondo
2022-01-01

Abstract

New technologies and materials for power electronic switching devices are gaining momentum. Indeed, wide-bandgap semiconductors, such as silicon carbide (SiC) or gallium nitride (GaN), manifest advanced and innovative properties regarding their switching performance. Thus, increasing the switching dv/dt rate and reducing switching power losses. However, faster switching transient enhances the insulating material stresses. Therefore, we developed a pulse generator based on a series connection of four SiC MOSFETs to produce super-fast transient pulses. After the electronic circuit design and implementation, we performed several tests showing the capability of the pulse generator and proving the correct operation under strict output load conditions. The best-achieved dv/dt rate with a 4.2 kV pulse amplitude is 155 kV/μs in no-load condition and 110 kV/μs on a 100 pF load capacitance.
2022 International Symposium on Power Electronics, Electrical Drives, Automation and Motion
Piscataway, NJ
IEEE Institute of Electrical and Electronics Engineers
978-1-6654-8459-6
978-1-6654-8460-2
Torrisi, Alessandro; Brunelli, Davide
High dv/dt pulse generator based on series-connetion SiC MOSFETs / Torrisi, Alessandro; Brunelli, Davide. - (2022), pp. 528-533. ((Intervento presentato al convegno SPEEDAM 2022 tenutosi a Sorrento, Italy nel 22th-24th June 2022 [10.1109/SPEEDAM53979.2022.9842038].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11572/352781
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