In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1÷2×1016 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements from gamma irradiated p-type dedicated test structures.
Measurements and TCAD simulations of bulk and surface radiation damage effects in silicon detectors / Moscatelli, F., Maccagnani, P., Passeri, D., Bilei, G.M., Servoli, L., Morozzi, A., Dalla Betta, G.-F., Mendicino, R., Boscardin, M., Zorzi, N.. - ELETTRONICO. - (2015), pp. 1-6. (2015 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2015 usa 2015) [10.1109/NSSMIC.2015.7581944].
Measurements and TCAD simulations of bulk and surface radiation damage effects in silicon detectors
Dalla Betta, G. -F.;Mendicino, R.;Boscardin, M.;
2015-01-01
Abstract
In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1÷2×1016 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements from gamma irradiated p-type dedicated test structures.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione
