Amorphous SiO2, TiO2 and x SiO2-(1-x) TiO2 powders, with nominal values of x = 0.9, 0.7 and 0.5, have been prepared via sol-gel, using silicon tetrahoxysilane (TEOS) and titanium tetraisopropoxide Ti(OPri)4. X-ray photoelectron spectroscopy (XPS) and X-ray induced Auger electron spectroscopy (XAES) are used for studying the surface chemical structure of the powders as a function of the air thermal treatment temperature up to 1273 K. For the whole range of temperature, XPS and XAES signals indicate that silicon and titanium are present as Si4+ and Ti4+ oxides. From the line shape of the O 1s peak, it is possible to distinguish between the single O-Ti and O-Si bonds and to disclose also the presence of Si-O-Ti cross linking bonds that are supposed to act as bridges between SiO2 and TiO2 moieties. Starting from 873 K, the Si-O-Ti bonds are broken and formation of a low amount of new Ti-O and a higher amount of Si-O bonds takes place. Si/Ti atomic ratios obtained by curve fitting the O 1s peaks and from Ti 2p3/2 and Si 2p peaks, confirm the silicon oxide surface enrichment. Furthermore, with increasing temperature, XAES data indicate the formation of crystalline phases.

Surface Chemical Structure of SiO2-TiO2 Sol-Gel Powders

1994-01-01

Abstract

Amorphous SiO2, TiO2 and x SiO2-(1-x) TiO2 powders, with nominal values of x = 0.9, 0.7 and 0.5, have been prepared via sol-gel, using silicon tetrahoxysilane (TEOS) and titanium tetraisopropoxide Ti(OPri)4. X-ray photoelectron spectroscopy (XPS) and X-ray induced Auger electron spectroscopy (XAES) are used for studying the surface chemical structure of the powders as a function of the air thermal treatment temperature up to 1273 K. For the whole range of temperature, XPS and XAES signals indicate that silicon and titanium are present as Si4+ and Ti4+ oxides. From the line shape of the O 1s peak, it is possible to distinguish between the single O-Ti and O-Si bonds and to disclose also the presence of Si-O-Ti cross linking bonds that are supposed to act as bridges between SiO2 and TiO2 moieties. Starting from 873 K, the Si-O-Ti bonds are broken and formation of a low amount of new Ti-O and a higher amount of Si-O bonds takes place. Si/Ti atomic ratios obtained by curve fitting the O 1s peaks and from Ti 2p3/2 and Si 2p peaks, confirm the silicon oxide surface enrichment. Furthermore, with increasing temperature, XAES data indicate the formation of crystalline phases.
1994
Mat. Res. Soc.Symp. Proc.
Pittsburgh
Materials Research Society
Ingo, G. M.; Padeletti, G.; Dire, S.; Babonneau, F.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11572/15770
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