In this paper, crosstalk characterization results of single-photon avalanche diode (SPAD) arrays in CMOS 150nm technology are reported and discussed. SPADs are implemented in two different sizes (15.6 and 25.6μm pitch) and three guard ring widths (0.6, 1.1 and1.6μm). A SPAD array is composed of 25 (5 × 5) devices, which can be separately activated. Measurement results show that total crosstalk probability is well below 1% for arrays with conservative guard ring SPADs, and decreases with distance between devices. We also observed crosstalk is dependent on geometry parameters of SPADs.
Crosstalk characterization of single-photon avalanche diode (SPAD) arrays in CMOS 150nm technology
Xu, Hesong;Pancheri, Lucio;Dalla Betta, Gian Franco;Huf Campos Braga, Leo
2014-01-01
Abstract
In this paper, crosstalk characterization results of single-photon avalanche diode (SPAD) arrays in CMOS 150nm technology are reported and discussed. SPADs are implemented in two different sizes (15.6 and 25.6μm pitch) and three guard ring widths (0.6, 1.1 and1.6μm). A SPAD array is composed of 25 (5 × 5) devices, which can be separately activated. Measurement results show that total crosstalk probability is well below 1% for arrays with conservative guard ring SPADs, and decreases with distance between devices. We also observed crosstalk is dependent on geometry parameters of SPADs.File in questo prodotto:
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