In this paper a multiple strip photo mixing demodulator fabricated on high resistivity silicon is described. The performance such as DC characteristics, demodulation contrast and non-linearity problem of a test sample are simulated and experimentally estimated. The experimental results exhibit a good DC charge separation and good dynamic demodulation capabilities up to 30MHz. The influence of modulation frequency and voltage on this device is also discussed. This test device corresponds to the first step towards incorporating a high resolution Time of Flight (TOF) based 3D image sensor. © 2012 IEEE.
Multiple strip photo mixing demodulator for 3D imaging implemented on high resistivity silicon
Hossain, Quazi Delwar;Dalla Betta, Gian Franco;Pancheri, Lucio;Stoppa, David;
2012-01-01
Abstract
In this paper a multiple strip photo mixing demodulator fabricated on high resistivity silicon is described. The performance such as DC characteristics, demodulation contrast and non-linearity problem of a test sample are simulated and experimentally estimated. The experimental results exhibit a good DC charge separation and good dynamic demodulation capabilities up to 30MHz. The influence of modulation frequency and voltage on this device is also discussed. This test device corresponds to the first step towards incorporating a high resolution Time of Flight (TOF) based 3D image sensor. © 2012 IEEE.File in questo prodotto:
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