Key assets for transparent electric contacts in optoelectronic applications are high conductivity and large transparency over extended spectral range. Indium-Tin-Oxide and Aluminium-doped-Zinc-oxide are commercial examples, with their electrical conductivity resembling those of metals, despite, their transparency being limited up to 1.5?m. This work introduces smooth and compact amorphous thin films of n-type semiconducting WO3-x prepared by RF-sputtering followed by annealing in dry air, as optical layers of tailorable dielectric properties. We evaluate Figure of Merit, combining electrical conductivity and optical transparency, and rate the performances as a transparent conductive layer.

Near-IR transparent conductive amorphous tungsten oxide thin layers by non-reactive radio-frequency magnetron sputtering / Hao, Chen; Chiasera, A; Cristina, Armellini; Giorgio, Speranza; Stefano, Varas; Osman, Sayginer; Antonio, Alfano; Marco, Cassinelli; Mario, Caironi; Raffaella, Suriano; Mohamed, Zaghloul; Alberto, Tagliaferri; Maurizio Ferrari and Silvia M., Pietralunga. - 255:(2021). (Intervento presentato al convegno EOS Annual Meeting (EOSAM 2021) - Topical Meeting (TOM) 6- Optical Materials: Crystals, Thin Films, Organic Molecules and Polymers, Syntheses, Characterization and Devices tenutosi a Roma - Italy nel 13/09/2021 - 17/09/2021) [10.1051/epjconf/202125505003].

Near-IR transparent conductive amorphous tungsten oxide thin layers by non-reactive radio-frequency magnetron sputtering

Chiasera A;
2021-01-01

Abstract

Key assets for transparent electric contacts in optoelectronic applications are high conductivity and large transparency over extended spectral range. Indium-Tin-Oxide and Aluminium-doped-Zinc-oxide are commercial examples, with their electrical conductivity resembling those of metals, despite, their transparency being limited up to 1.5?m. This work introduces smooth and compact amorphous thin films of n-type semiconducting WO3-x prepared by RF-sputtering followed by annealing in dry air, as optical layers of tailorable dielectric properties. We evaluate Figure of Merit, combining electrical conductivity and optical transparency, and rate the performances as a transparent conductive layer.
2021
EPJ web of conferences (Print)
FRA
EDP Sciences
Hao, Chen; Chiasera, A; Cristina, Armellini; Giorgio, Speranza; Stefano, Varas; Osman, Sayginer; Antonio, Alfano; Marco, Cassinelli; Mario, Caironi; Raffaella, Suriano; Mohamed, Zaghloul; Alberto, Tagliaferri; Maurizio Ferrari and Silvia M., Pietralunga
Near-IR transparent conductive amorphous tungsten oxide thin layers by non-reactive radio-frequency magnetron sputtering / Hao, Chen; Chiasera, A; Cristina, Armellini; Giorgio, Speranza; Stefano, Varas; Osman, Sayginer; Antonio, Alfano; Marco, Cassinelli; Mario, Caironi; Raffaella, Suriano; Mohamed, Zaghloul; Alberto, Tagliaferri; Maurizio Ferrari and Silvia M., Pietralunga. - 255:(2021). (Intervento presentato al convegno EOS Annual Meeting (EOSAM 2021) - Topical Meeting (TOM) 6- Optical Materials: Crystals, Thin Films, Organic Molecules and Polymers, Syntheses, Characterization and Devices tenutosi a Roma - Italy nel 13/09/2021 - 17/09/2021) [10.1051/epjconf/202125505003].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11572/342760
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