The output of two grating-stabilized external-cavity diode lasers was injected into a semiconductor tapered amplifier in a master oscillator-power amplifier (MOPA) configuration. At a wavelength of 671 nm this configuration produced 210 mW of power in a diffraction-limited mode with two frequency components of narrow linewidth. The frequency difference δ was varied from 20 MHz to 12 GHz, while the power ratio of the two components was freely adjustable. For δ < 2 GHz additional frequency sidebands appear in the output of the MOPA. This configuration is a flexible and simple high-power cw laser source for light with multiple narrow-linewidth frequency components. © 1999 Optical Society of America.
High-power multiple-frequency narrow-linewidth laser source based on a semiconductor tapered amplifier / Ferrari, G.; Mewes, M. -O.; Schreck, F.; Salomon, C.. - In: OPTICS LETTERS. - ISSN 0146-9592. - 24:3(1999), pp. 151-153. [10.1364/OL.24.000151]
High-power multiple-frequency narrow-linewidth laser source based on a semiconductor tapered amplifier
Ferrari G.;Salomon C.
1999-01-01
Abstract
The output of two grating-stabilized external-cavity diode lasers was injected into a semiconductor tapered amplifier in a master oscillator-power amplifier (MOPA) configuration. At a wavelength of 671 nm this configuration produced 210 mW of power in a diffraction-limited mode with two frequency components of narrow linewidth. The frequency difference δ was varied from 20 MHz to 12 GHz, while the power ratio of the two components was freely adjustable. For δ < 2 GHz additional frequency sidebands appear in the output of the MOPA. This configuration is a flexible and simple high-power cw laser source for light with multiple narrow-linewidth frequency components. © 1999 Optical Society of America.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione
