Depth resolved defect characterization of energetic ion irradiated ZnO by positron annihilation techniques and photoluminescence

Depth resolved positron annihilation spectroscopy (PAS) has been employed to characterize the 1.2 MeV Ar and 800 keV O ion beam induced defects in ZnO. The first extraordinary result was the observation of defects in ion beam irradiated ZnO beyond the maximum penetration depth of the respective ions. The positron annihilation results revealed the formation of vacancy clusters consisting of both VZn and VO in ZnO which are saturated at a threshold radiation dose (defined as nuclear energy loss, Sn  ×  fluence). From the photoluminescence (PL) spectra it has been observed that the PL intensity at the band edge degraded with the increase of open volume defects in ZnO. The evolution of the 2.4 eV PL, which is linked with the oxygen vacancies, is more significant due to Ar irradiation than the oxygen irradiation.